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RN2101MFV,L3F(CT

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RN2101MFV,L3F(CT

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max) : 100 mA

Product Status : Active

Transistor Type : PNP - Pre-Biased

Frequency - Transition : 250 MHz

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Series : -

Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) : 50 V

Supplier Device Package : VESM

Resistor - Base (R1) : 4.7 kOhms

Mfr : Toshiba Semiconductor and Storage

Resistor - Emitter Base (R2) : 4.7 kOhms

Current - Collector Cutoff (Max) : 500nA

Power - Max : 150 mW

Package / Case : SOT-723

DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V

Base Product Number : RN2101

Description : TRANS PREBIAS PNP 50V 0.1A VESM

Stock : In Stock

Shipping Method : LCL, AIR, FCL, Express

Payment Terms : L/C, D/A, D/P, T/T, Western Union,

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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM

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